IRF7832TRPBF vs IRF7309TRPBF 比較
詳細並排比較 IRF7832TRPBF 由 Infineon 與 IRF7309TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF7832TRPBF | IRF7309TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF7832TRPBF | — |
| FET Type | N-Channel | — |
| Technology | HEXFET (trench MOSFET) | IR HEXFET Generation V |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 20 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.0 mOhm | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) typical | 1.0 V to 2.5 V | — |
| Total Gate Charge (Qg) typical | 34 nC | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| 工作溫度範圍 | -55 C to +150 C (TJ) | -55C to +150C (TJ) |
| 封裝 | 8-SO (SOIC-8) | 8-SO (SOIC-8) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 (per JEDEC J-STD-020) | MSL-1 (unlimited floor life per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| Configuration | — | Dual N-Channel + P-Channel (Complementary) |
| Polarity | — | N+P |
| Continuous Drain Current (N-channel, TA=25C) | — | 4 A |
| Continuous Drain Current (P-channel, TA=25C) | — | 3 A |
| On-Resistance (N-channel, max) | — | 50 mOhm |
| On-Resistance (P-channel, max) | — | [DATA_NEEDED: RDS(on) P-channel value] |
| Power Dissipation (TA=25C) | — | 1.4 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Lead-Free Status | — | Yes (TRPBF suffix = Pb-free) |
| Packaging | — | Tape & Reel |