IRF7854TRPBF vs IRF7495TRPBF Perbandingan
Perbandingan bersamaan detil IRF7854TRPBF dari Infineon dan IRF7495TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF7854TRPBF | IRF7495TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $0,48 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 10 A | — |
| Power Dissipation (PD) at Ta=25°C | 2.5 W | — |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V | — |
| Total Gate Charge Qg | 27 nC | — |
| Paket | SO-8 | 8-SOIC (SO-8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET (planar N-channel) | IR MOSFET (HEXFET) |
| Rentang Suhu Kerja | -55°C to +150°C (TJ) | -55 C to +150 C (TJ) |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | — |
| Qualification | JEDEC industrial, Normal level | — |
| Solder Process | Reflow and wave-solderable | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 100 V |
| Continuous Drain Current (ID) at TA=25 C | — | 7.3 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 22 mOhm |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Gate Charge (Qg) Typ | — | 34 nC at 10 V |
| Input Capacitance (Ciss) Max | — | 1530 pF at 25 V |
| Power Dissipation (PD) Max at TA=25 C | — | 2.5 W |
| Level MSL | — | 1 (unlimited) |
| Status RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Estimated EOL Date | — | 2027 |
| ECCN | — | EAR99 |