IRF8714TRPBF vs IRFR024NTRPBF Perbandingan

Perbandingan bersamaan detil IRF8714TRPBF dari Infineon dan IRFR024NTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF8714TRPBF IRFR024NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology HEXFET / StrongIRFET (planar MOSFET) —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 14 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 60 A
On-State Resistance (RDS(on)) max at VGS=10V 8.7 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical range] —
Gate Charge (Qg) typical 8.1 nC —
Gate-Source Voltage (VGS) max ±20 V —
Power Dissipation (PD) at TA=25C 2.5 W —
Rentang Suhu Kerja -55C to +150C (junction) —
Paket SO-8 (8-SOIC) TO-252-3 (DPAK, SC-63), surface mount
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Avalanche Rated Yes —
Lead-Free / RoHS Lead-Free / RoHS Compliant —
Level MSL 1 (per Infineon package qualification) 1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Series — HEXFET Power MOSFET (5th generation)
Tipe Transistor — N-Channel MOSFET
Maximum Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) — 17 A (at TC = 25 C)
On-Resistance (RDS(on)) — 75 mOhm max (at VGS = 10 V)
Gate-Source Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Typical Gate Charge (Qg) — 13.3 nC
Total Power Dissipation (PD) — 45 W (at TC = 25 C)
Suhu Hubung Kerja — -55 C to +175 C
Packaging — Tape and Reel (TR)
RoHS Compliance — Compliant (Pb-free / PbF terminations)

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