IRF8714TRPBF vs IRFR024NTRPBF 比較

詳細並排比較 IRF8714TRPBF 由 Infineon 與 IRFR024NTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR024NTRPBF IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRFR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRFR024NTRPBF ✓ 啟用中

規格比較

參數 IRF8714TRPBF IRFR024NTRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology HEXFET / StrongIRFET (planar MOSFET) —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 14 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 60 A
On-State Resistance (RDS(on)) max at VGS=10V 8.7 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical range] —
Gate Charge (Qg) typical 8.1 nC —
Gate-Source Voltage (VGS) max ±20 V —
Power Dissipation (PD) at TA=25C 2.5 W —
工作溫度範圍 -55C to +150C (junction) —
封裝 SO-8 (8-SOIC) TO-252-3 (DPAK, SC-63), surface mount
安裝類型 Surface Mount Surface Mount
腳位數 8 —
Avalanche Rated Yes —
Lead-Free / RoHS Lead-Free / RoHS Compliant —
MSL 等級 1 (per Infineon package qualification) 1 (per JEDEC J-STD-020)
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Series — HEXFET Power MOSFET (5th generation)
電晶體類型 — N-Channel MOSFET
Maximum Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) — 17 A (at TC = 25 C)
On-Resistance (RDS(on)) — 75 mOhm max (at VGS = 10 V)
Gate-Source Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Typical Gate Charge (Qg) — 13.3 nC
Total Power Dissipation (PD) — 45 W (at TC = 25 C)
工作接面溫度 — -55 C to +175 C
Packaging — Tape and Reel (TR)
RoHS Compliance — Compliant (Pb-free / PbF terminations)

資料表與資源

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