IRFB4310PBF vs IRFS7440TRLPBF Perbandingan

Perbandingan bersamaan detil IRFB4310PBF dari Infineon dan IRFS7440TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFB4310PBF IRFS7440TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Technology HEXFET (IR MOSFET) MOSFET (Metal Oxide Semiconductor)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc=25C 130 A 120 A
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Maximum Power Dissition (PD) at Tc=25C 300 W —
On-Resistance RDS(on) max at VGS=10V 7 mOhm —
On-Resistance RDS(on) typical at VGS=10V 5.6 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS maximum rating] —
Total Gate Charge (Qg) 170 nC 90 nC (typical)
Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] —
Rentang Suhu Kerja -55C to +175C (junction) [DATA_NEEDED: junction temperature range]
Paket TO-220AB (through-hole) TO-263 (D2PAK), surface mount
Tipe Mounting Through Hole Surface Mount
Avalanche Rated Yes —
Status RoHS Compliant Compliant (lead-free)
Lead-Free Yes (Pb-free PBF suffix) —
Manufacturer — Infineon Technologies
Series — StrongIRFET
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 40 V
Power Dissipation (PD) at Tc=25C — 208 W
On-Resistance (RDS(on)) max at VGS=10V — 2.5 mOhm
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate Drive Voltage (optimized) — 10 V (normal level)
Operating Frequency Range (optimized) — <100 kHz
Qualification — JEDEC standard

Spek dan Sumber

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