IRFB4310PBF vs IRFS7440TRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFB4310PBF sa pamamagitan ng Infineon at IRFS7440TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFB4310PBF | IRFS7440TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | MOSFET (Metal Oxide Semiconductor) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc=25C | 130 A | 120 A |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissition (PD) at Tc=25C | 300 W | — |
| On-Resistance RDS(on) max at VGS=10V | 7 mOhm | — |
| On-Resistance RDS(on) typical at VGS=10V | 5.6 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS maximum rating] | — |
| Total Gate Charge (Qg) | 170 nC | 90 nC (typical) |
| Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | [DATA_NEEDED: junction temperature range] |
| Packhaging | TO-220AB (through-hole) | TO-263 (D2PAK), surface mount |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Avalanche Rated | Yes | — |
| Tindminan RoHS | Compliant | Compliant (lead-free) |
| Lead-Free | Yes (Pb-free PBF suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | StrongIRFET |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Power Dissipation (PD) at Tc=25C | — | 208 W |
| On-Resistance (RDS(on)) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Drive Voltage (optimized) | — | 10 V (normal level) |
| Operating Frequency Range (optimized) | — | <100 kHz |
| Qualification | — | JEDEC standard |