IRFB4310PBF vs IRFS7440TRLPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRFB4310PBF tarafından Infineon ve IRFS7440TRLPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRFB4310PBF IRFS7440TRLPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Transistor Türü N-Channel MOSFET —
Technology HEXFET (IR MOSFET) MOSFET (Metal Oxide Semiconductor)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc=25C 130 A 120 A
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Maximum Power Dissition (PD) at Tc=25C 300 W —
On-Resistance RDS(on) max at VGS=10V 7 mOhm —
On-Resistance RDS(on) typical at VGS=10V 5.6 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS maximum rating] —
Total Gate Charge (Qg) 170 nC 90 nC (typical)
Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] —
İşletim Sıcaklığı Aralığı -55C to +175C (junction) [DATA_NEEDED: junction temperature range]
Paket TO-220AB (through-hole) TO-263 (D2PAK), surface mount
Montaj Türü Through Hole Surface Mount
Avalanche Rated Yes —
RoHS Durumu Compliant Compliant (lead-free)
Lead-Free Yes (Pb-free PBF suffix) —
Manufacturer — Infineon Technologies
Series — StrongIRFET
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 40 V
Power Dissipation (PD) at Tc=25C — 208 W
On-Resistance (RDS(on)) max at VGS=10V — 2.5 mOhm
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate Drive Voltage (optimized) — 10 V (normal level)
Operating Frequency Range (optimized) — <100 kHz
Qualification — JEDEC standard

Dökümanlar & Kaynaklar

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