IRFB52N15DPBF vs IRFS52N15DTRLP Perbandingan
Perbandingan bersamaan detil IRFB52N15DPBF dari Infineon dan IRFS52N15DTRLP dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFB52N15DPBF | IRFS52N15DTRLP |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (V(BR)DSS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25C | 51 A | — |
| Pulsed Drain Current (IDM) | 204 A | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | 2.0 V to 4.0 V (typical 3 V) |
| Static Drain-Source On-Resistance (RDS(on)) | 32 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 60 nC (typical) | [DATA_NEEDED: total gate charge in nC] |
| Power Dissipation (PD) at TC=25C | 230 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Package Type | TO-220AB (through-hole) | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Technology | HEXFET (vertical DMOS, hexagonal cell) | HEXFET (Planar) |
| Tipe Mounting | Through Hole | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Lead-Free Finish | Yes (Pb-free PBF suffix) | Yes (matte tin) |
| Qualification Standard | Industrial market (per IR/Infineon) | — |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (Vdss) | — | 150 V |
| Continuous Drain Current (Id) @ TC = 25 C | — | 51 A (Tc) |
| Continuous Drain Current (Id) @ TC = 100 C | — | 36 A (Tc, estimated) |
| Continuous Drain Current (Id) @ TA = 25 C | — | 60 A (Ta, datasheet) |
| On-Resistance Rds(on) max @ VGS = 10 V | — | 32 mOhm |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd in nC] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss in pF] |
| Power Dissipation (Pd) @ TC = 25 C | — | 230 W (Tc) |
| Power Dissipation (Pd) @ TA = 25 C | — | 3.8 W (Ta) |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC in C/W] |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | [DATA_NEEDED: RthJA in C/W] |
| Rentang Suhu Kerja | — | -55 C to +175 C (junction) |
| Paket | — | D2PAK (TO-263) surface mount |
| Jumlah Pin | — | 3 (Gate, Drain, Source) + tab |
| Level MSL | — | 1 (per JEDEC J-STD-020, typical for D2PAK) |