IRFB52N15DPBF vs IRFS52N15DTRLP Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFB52N15DPBF sa pamamagitan ng Infineon at IRFS52N15DTRLP sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFB52N15DPBF | IRFS52N15DTRLP |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Drain-Source Voltage (V(BR)DSS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25C | 51 A | — |
| Pulsed Drain Current (IDM) | 204 A | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V | 2.0 V to 4.0 V (typical 3 V) |
| Static Drain-Source On-Resistance (RDS(on)) | 32 mOhm at VGS=10V | — |
| Total Gate Charge (Qg) | 60 nC (typical) | [DATA_NEEDED: total gate charge in nC] |
| Power Dissipation (PD) at TC=25C | 230 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | — |
| Package Type | TO-220AB (through-hole) | — |
| Polarity / Channel Type | N-Channel Enhancement Mode | — |
| Technology | HEXFET (vertical DMOS, hexagonal cell) | HEXFET (Planar) |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free Finish | Yes (Pb-free PBF suffix) | Yes (matte tin) |
| Qualification Standard | Industrial market (per IR/Infineon) | — |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (Vdss) | — | 150 V |
| Continuous Drain Current (Id) @ TC = 25 C | — | 51 A (Tc) |
| Continuous Drain Current (Id) @ TC = 100 C | — | 36 A (Tc, estimated) |
| Continuous Drain Current (Id) @ TA = 25 C | — | 60 A (Ta, datasheet) |
| On-Resistance Rds(on) max @ VGS = 10 V | — | 32 mOhm |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd in nC] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss in pF] |
| Power Dissipation (Pd) @ TC = 25 C | — | 230 W (Tc) |
| Power Dissipation (Pd) @ TA = 25 C | — | 3.8 W (Ta) |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC in C/W] |
| Thermal Resistance Junction-to-Ambient (RthJA) | — | [DATA_NEEDED: RthJA in C/W] |
| Hanay ng Temperature na Operasyon | — | -55 C to +175 C (junction) |
| Packhaging | — | D2PAK (TO-263) surface mount |
| Bilang ng Pin | — | 3 (Gate, Drain, Source) + tab |
| Level ng MSL | — | 1 (per JEDEC J-STD-020, typical for D2PAK) |