IRFB52N15DPBF vs IRFS52N15DTRLP 比較

詳細並排比較 IRFB52N15DPBF 由 Infineon 與 IRFS52N15DTRLP 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFS52N15DTRLP IRFS52N15DTRLP - 150V 51A N-Channel HEXFET MOSFET D2PAK

IRFS52N15DTRLP - 150V 51A N-Channel HEXFET MOSFET D2PAK

IRFS52N15DTRLP ✓ 啟用中

規格比較

參數 IRFB52N15DPBF IRFS52N15DTRLP
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Drain-Source Voltage (V(BR)DSS) 150 V —
Continuous Drain Current (ID) at TC=25C 51 A —
Pulsed Drain Current (IDM) 204 A —
Gate Threshold Voltage (VGS(th)) 2.0 V to 4.0 V 2.0 V to 4.0 V (typical 3 V)
Static Drain-Source On-Resistance (RDS(on)) 32 mOhm at VGS=10V —
Total Gate Charge (Qg) 60 nC (typical) [DATA_NEEDED: total gate charge in nC]
Power Dissipation (PD) at TC=25C 230 W —
Power Dissipation (PD) at TA=25C 3.8 W —
工作接面溫度 -55 C to +175 C —
Package Type TO-220AB (through-hole) —
Polarity / Channel Type N-Channel Enhancement Mode —
Technology HEXFET (vertical DMOS, hexagonal cell) HEXFET (Planar)
安裝類型 Through Hole Surface Mount
RoHS 狀態 Compliant Compliant
Lead-Free Finish Yes (Pb-free PBF suffix) Yes (matte tin)
Qualification Standard Industrial market (per IR/Infineon) —
FET Type — N-Channel MOSFET
Drain-to-Source Voltage (Vdss) — 150 V
Continuous Drain Current (Id) @ TC = 25 C — 51 A (Tc)
Continuous Drain Current (Id) @ TC = 100 C — 36 A (Tc, estimated)
Continuous Drain Current (Id) @ TA = 25 C — 60 A (Ta, datasheet)
On-Resistance Rds(on) max @ VGS = 10 V — 32 mOhm
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd in nC]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss in pF]
Power Dissipation (Pd) @ TC = 25 C — 230 W (Tc)
Power Dissipation (Pd) @ TA = 25 C — 3.8 W (Ta)
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC in C/W]
Thermal Resistance Junction-to-Ambient (RthJA) — [DATA_NEEDED: RthJA in C/W]
工作溫度範圍 — -55 C to +175 C (junction)
封裝 — D2PAK (TO-263) surface mount
腳位數 — 3 (Gate, Drain, Source) + tab
MSL 等級 — 1 (per JEDEC J-STD-020, typical for D2PAK)

資料表與資源

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