IRFB7545PBF vs IPB019N08N3GATMA1 Perbandingan

Perbandingan bersamaan detil IRFB7545PBF dari Infineon dan IPB019N08N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFB7545PBF IPB019N08N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IRFB7545PBF —
Technology StrongIRFET™ (HEXFET, N-Channel) MOSFET (Metal Oxide)
Polarity N-Channel —
VDS (Drain-Source Voltage) max 60 V —
VGS (Gate-Source Voltage) max ±20 V —
RDS(on) max at VGS=10V 5.9 mOhm —
Continuous Drain Current (ID) at Tc=25C 95 A —
Pulsed Drain Current (IDM) 380 A —
Single-Pulse Avalanche Current (IAS) 57 A —
Power Dissipation (PD) at Tc=25C 125 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
Suhu Hubung Kerja -55C to +175C —
Paket TO-220AB (Through-Hole) PG-TO263-7 (D2PAK-6, surface mount)
Tipe Mounting Through Hole (THT) Surface Mount
Lead-Free / RoHS Yes (Lead-Free, PBF suffix) —
Level MSL N/A (Through-Hole) —
Gate Drive Voltage (typical) 10 V —
Avalanche Energy Rated Yes —
Series — OptiMOS 3
FET Type — N-Channel
Drain-to-Source Voltage (Vdss) — 80 V
Continuous Drain Current (Id) @ Tc=25°C — 180 A
Power Dissipation (Pd) @ Tc=25°C — 300 W
On-Resistance RDS(on) Max @ VGS=10V — 1.9 mΩ
Gate Threshold Voltage (Vgs(th)) — 3.5 V
Drive Voltage (Rds On Max) — 6 V, 10 V
Total Gate Charge (Qg) @ VGS=10V — 206 nC
Input Capacitance (Ciss) — 14.2 nF
Output Capacitance (Coss) — 3.84 nF
Reverse Transfer Capacitance (Crss) — 3.84 nF
Rentang Suhu Kerja — -55 °C to +175 °C
Status RoHS — Compliant

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