IRFB7545PBF vs IPB019N08N3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB7545PBF disebabkan oleh Infineon dan IPB019N08N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB7545PBF IPB019N08N3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number IRFB7545PBF —
Technology StrongIRFET™ (HEXFET, N-Channel) MOSFET (Metal Oxide)
Polarity N-Channel —
VDS (Drain-Source Voltage) max 60 V —
VGS (Gate-Source Voltage) max ±20 V —
RDS(on) max at VGS=10V 5.9 mOhm —
Continuous Drain Current (ID) at Tc=25C 95 A —
Pulsed Drain Current (IDM) 380 A —
Single-Pulse Avalanche Current (IAS) 57 A —
Power Dissipation (PD) at Tc=25C 125 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan TO-220AB (Through-Hole) PG-TO263-7 (D2PAK-6, surface mount)
Jenis Pemasangan Through Hole (THT) Surface Mount
Lead-Free / RoHS Yes (Lead-Free, PBF suffix) —
Aras MSL N/A (Through-Hole) —
Gate Drive Voltage (typical) 10 V —
Avalanche Energy Rated Yes —
Series — OptiMOS 3
FET Type — N-Channel
Drain-to-Source Voltage (Vdss) — 80 V
Continuous Drain Current (Id) @ Tc=25°C — 180 A
Power Dissipation (Pd) @ Tc=25°C — 300 W
On-Resistance RDS(on) Max @ VGS=10V — 1.9 mΩ
Gate Threshold Voltage (Vgs(th)) — 3.5 V
Drive Voltage (Rds On Max) — 6 V, 10 V
Total Gate Charge (Qg) @ VGS=10V — 206 nC
Input Capacitance (Ciss) — 14.2 nF
Output Capacitance (Coss) — 3.84 nF
Reverse Transfer Capacitance (Crss) — 3.84 nF
Gambaran Suhu Operasi — -55 °C to +175 °C
Status RoHS — Compliant

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