IRFH5020TRPBF vs IRFH7084TRPBF Perbandingan

Perbandingan bersamaan detil IRFH5020TRPBF dari Infineon dan IRFH7084TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFH5020TRPBF IRFH7084TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Family HEXFET Power MOSFET —
FET Type MOSFET N-Channel, Metal Oxide N-Channel
Configuration Single with built-in diode —
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TA=25°C 5.1 A —
Pulsed Drain Current (IDM) 63 A —
Gate-to-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=10V 55 mΩ —
Gate Charge (Qg) typ 11 nC —
Power Dissipation (TA=25°C) 3.6 W —
Dissipasi Listrik (TC=25°C) 8.3 W —
Thermal Resistance, Junction-to-PCB (RthJB) 0.8 °C/W —
Package Type 8-PQFN (5x6 mm) SuperSO8 —
Tipe Mounting Surface Mount Surface Mount
Profile Height ≤ 0.9 mm —
Rentang Suhu Kerja -55 °C to +150 °C (TJ max) -55°C to +175°C (TJ)
Qualification Standard JEDEC (Normal level) —
Gate Drive Optimization 10 V VGS —
RoHS Compliance Compliant (Pb-free suffix PBF) —
Level MSL 1 (per industry standard for PQFN-8) 1
Technology — StrongIRFET™ (trench MOSFET)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25°C, package-limited) — 100 A
Silicon-Limited Drain Current — 265 A
Power Dissipation (PD, Tc=25°C) — 156 W
On-Resistance RDS(on) max @ VGS=10V — 1.25 mΩ
On-Resistance RDS(on) typ @ VGS=10V — 0.95 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage VGS(th) typ — 1.7 V to 2.7 V
Input Capacitance (Ciss) max @ 25V — 6560 pF
Paket — 8-PQFN 5x6 mm (SuperSO8)
Status RoHS — Compliant
Bebas Halogen — Compliant
RthJC max — 0.96 °C/W (per datasheet)

Spek dan Sumber

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