IRFH5020TRPBF vs IRFH7084TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFH5020TRPBF disebabkan oleh Infineon dan IRFH7084TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFH5020TRPBF | IRFH7084TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Product Family | HEXFET Power MOSFET | — |
| FET Type | MOSFET N-Channel, Metal Oxide | N-Channel |
| Configuration | Single with built-in diode | — |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TA=25°C | 5.1 A | — |
| Pulsed Drain Current (IDM) | 63 A | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=10V | 55 mΩ | — |
| Gate Charge (Qg) typ | 11 nC | — |
| Power Dissipation (TA=25°C) | 3.6 W | — |
| Pembuangan Kuasa (TC=25°C) | 8.3 W | — |
| Thermal Resistance, Junction-to-PCB (RthJB) | 0.8 °C/W | — |
| Package Type | 8-PQFN (5x6 mm) SuperSO8 | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Profile Height | ≤ 0.9 mm | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C (TJ max) | -55°C to +175°C (TJ) |
| Qualification Standard | JEDEC (Normal level) | — |
| Gate Drive Optimization | 10 V VGS | — |
| RoHS Compliance | Compliant (Pb-free suffix PBF) | — |
| Aras MSL | 1 (per industry standard for PQFN-8) | 1 |
| Technology | — | StrongIRFET™ (trench MOSFET) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25°C, package-limited) | — | 100 A |
| Silicon-Limited Drain Current | — | 265 A |
| Power Dissipation (PD, Tc=25°C) | — | 156 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.25 mΩ |
| On-Resistance RDS(on) typ @ VGS=10V | — | 0.95 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V to 2.7 V |
| Input Capacitance (Ciss) max @ 25V | — | 6560 pF |
| Kemasan | — | 8-PQFN 5x6 mm (SuperSO8) |
| Status RoHS | — | Compliant |
| Boson Bebas | — | Compliant |
| RthJC max | — | 0.96 °C/W (per datasheet) |