IRFR2405TRLPBF vs IRFR2405TRPBF Perbandingan

Perbandingan bersamaan detil IRFR2405TRLPBF dari Infineon dan IRFR2405TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR2405TRLPBF IRFR2405TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET —
Technology HEXFET (IR MOSFET, 7th generation) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 55 V 55 V
Continuous Drain Current (ID) at Tc 56 A —
Pulsed Drain Current (IDM) 200 A (typical, per datasheet family) [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 16 mOhm —
Gate Charge (Qg) typical 70 nC —
Power Dissipation (PD) at Tc 110 W —
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max rating]
Rentang Suhu Kerja -55 C to +175 C (junction) —
Paket TO-252AA (DPAK), 3-pin (2 + Tab) TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Avalanche Energy Rated Yes (HEXFET ruggedized design) —
Lead-Free / RoHS Yes, PBF suffix indicates lead-free and RoHS compliant —
Packaging Tape & Reel (TR) —
Manufacturer — Infineon Technologies
Part Status — Active
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 56 A
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Total Gate Charge (Qg) — 70 nC
Power Dissipation (PD) at Tc=25C — 110 W
Suhu Hubung Kerja — -55C to +175C
Jumlah Pin — 3 (Gate, Drain, Source) + Tab
Level MSL — 1
Status RoHS — Compliant (Lead-Free PBF suffix)
Bebas Halogen — [DATA_NEEDED: halogen-free status]
Avalanche Rated — Yes (100% avalanche tested)

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