IRFR2405TRLPBF vs IRFR2405TRPBF 比較

詳細並排比較 IRFR2405TRLPBF 由 Infineon 與 IRFR2405TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR2405TRLPBF IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF ✓ 啟用中
Infineon
IRFR2405TRPBF IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF - 55V 56A N-Channel HEXFET MOSFET | Infineon

IRFR2405TRPBF ✓ 啟用中

規格比較

參數 IRFR2405TRLPBF IRFR2405TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel MOSFET —
Technology HEXFET (IR MOSFET, 7th generation) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 55 V 55 V
Continuous Drain Current (ID) at Tc 56 A —
Pulsed Drain Current (IDM) 200 A (typical, per datasheet family) [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 16 mOhm —
Gate Charge (Qg) typical 70 nC —
Power Dissipation (PD) at Tc 110 W —
Gate-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max rating]
工作溫度範圍 -55 C to +175 C (junction) —
封裝 TO-252AA (DPAK), 3-pin (2 + Tab) TO-252AA (DPAK)
安裝類型 Surface Mount Surface Mount
Avalanche Energy Rated Yes (HEXFET ruggedized design) —
Lead-Free / RoHS Yes, PBF suffix indicates lead-free and RoHS compliant —
Packaging Tape & Reel (TR) —
Manufacturer — Infineon Technologies
Part Status — Active
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 56 A
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Total Gate Charge (Qg) — 70 nC
Power Dissipation (PD) at Tc=25C — 110 W
工作接面溫度 — -55C to +175C
腳位數 — 3 (Gate, Drain, Source) + Tab
MSL 等級 — 1
RoHS 狀態 — Compliant (Lead-Free PBF suffix)
無鹵素 — [DATA_NEEDED: halogen-free status]
Avalanche Rated — Yes (100% avalanche tested)

資料表與資源

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