IRFR3710ZTRPBF vs IRLU024NPBF Perbandingan

Perbandingan bersamaan detil IRFR3710ZTRPBF dari Infineon dan IRLU024NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR3710ZTRPBF IRLU024NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel, Logic-Level
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 56 A 17 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] [DATA_NEEDED: IDM]
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 18 mOhm —
Power Dissipation (PD) at TC=25C 140 W 45 W
Suhu Hubung Kerja -55C to +175C -55C to +175C
Technology HEXFET (IR MOSFET) HEXFET Power MOSFET (5th generation)
Paket TO-252AA (DPAK) IPAK (TO-251AA), Through Hole
Tipe Mounting Surface Mount Through Hole
Status RoHS Compliant —
Lead-Free Yes —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLU024NPBF
Drain-to-Source Voltage (VDS) — 55 V
On-Resistance RDS(on) max at VGS=10V — 65 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) min/typ/max]
Total Gate Charge (Qg) — 10 nC (typical, per listing)
Thermal Resistance Junction-to-Case (RthJC) — 3.3 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 110 C/W (50 C/W PCB-mounted)
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free plating)
Qualification — JEDEC standard
Gate Drive Voltage (optimized) — 10 V (capable of 4.5 V)

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