IRFR3710ZTRPBF vs IRLU024NPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR3710ZTRPBF sa pamamagitan ng Infineon at IRLU024NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFR3710ZTRPBF IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF - 100V N-Channel 56A HEXFET MOSFET | Infineon

IRFR3710ZTRPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFR3710ZTRPBF IRLU024NPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel, Logic-Level
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 56 A 17 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] [DATA_NEEDED: IDM]
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Static Drain-Source On-Resistance RDS(on) max at VGS=10V 18 mOhm —
Power Dissipation (PD) at TC=25C 140 W 45 W
Temperature ng Junction na Operasyon -55C to +175C -55C to +175C
Technology HEXFET (IR MOSFET) HEXFET Power MOSFET (5th generation)
Packhaging TO-252AA (DPAK) IPAK (TO-251AA), Through Hole
Uri ng Pagpapasok Surface Mount Through Hole
Tindminan RoHS Compliant —
Lead-Free Yes —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLU024NPBF
Drain-to-Source Voltage (VDS) — 55 V
On-Resistance RDS(on) max at VGS=10V — 65 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) min/typ/max]
Total Gate Charge (Qg) — 10 nC (typical, per listing)
Thermal Resistance Junction-to-Case (RthJC) — 3.3 C/W
Thermal Resistance Junction-to-Ambient (RthJA) — 110 C/W (50 C/W PCB-mounted)
Lead-Free / RoHS — Yes (PBF suffix indicates lead-free plating)
Qualification — JEDEC standard
Gate Drive Voltage (optimized) — 10 V (capable of 4.5 V)

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