IRFR4615TRLPBF vs IRF2907ZSTRLPBF Perbandingan

Perbandingan bersamaan detil IRFR4615TRLPBF dari Infineon dan IRF2907ZSTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRFR4615TRLPBF IRF2907ZSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology IR MOSFET (N-Channel Enhancement Mode) IR HEXFET / IR MOSFET
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at TC=25C 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] —
On-Resistance RDS(on) max at VGS=10V 42 mOhm —
Total Gate Charge (Qg) 26 nC —
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Power Dissipation (PD) at TC=25C 144 W —
Avalanche Energy (EAS) 109 mJ —
Rentang Suhu Kerja -55C to +175C —
Paket TO-252AA (DPAK) D2PAK (TO-263AB) surface mount
Tipe Mounting Surface Mount Surface Mount (SMD)
Lead-Free / RoHS Yes (PBF suffix indicates Pb-free) —
Energi Pulsa Tandai 109 mJ —
Transistor Polarity — N-Channel
Drain-Source Voltage V(BR)DSS — 75 V
Arus Alir Berlanjut (TC=25°C) — 170 A
Arus Alir Berlanjut (TC=100°C) — [DATA_NEEDED: ID at TC=100C]
RDS(on) max at VGS = 10 V — 4.5 mOhm
RDS(on) typical at VGS = 10 V — 3.5 mOhm
Gate Threshold Voltage VGS(th) — 2.0 V to 4.0 V
Maximum Power Dissipation (TC = 25 C) — 300 W
Suhu Hubung Kerja — -55 C to +175 C
Jumlah Pin — 3 (Gate, Drain, Source)
Packaging — Tape and Reel (left orientation)
Lead-Free — Yes (PBF suffix)
Status RoHS — Compliant
Avalanche Rating — Repetitive avalanche allowed up to TJ(max)

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