IRFR4615TRLPBF vs IRFH7084TRPBF Perbandingan

Perbandingan bersamaan detil IRFR4615TRLPBF dari Infineon dan IRFH7084TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRFR4615TRLPBF IRFH7084TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology IR MOSFET (N-Channel Enhancement Mode) StrongIRFET™ (trench MOSFET)
Drain-Source Voltage (VDS) 150 V 40 V
Continuous Drain Current (ID) at TC=25C 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] ±20 V
On-Resistance RDS(on) max at VGS=10V 42 mOhm —
Total Gate Charge (Qg) 26 nC —
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Power Dissipation (PD) at TC=25C 144 W —
Avalanche Energy (EAS) 109 mJ —
Rentang Suhu Kerja -55C to +175C -55°C to +175°C (TJ)
Paket TO-252AA (DPAK) 8-PQFN 5x6 mm (SuperSO8)
Tipe Mounting Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix indicates Pb-free) —
Energi Pulsa Tandai 109 mJ —
FET Type — N-Channel
Continuous Drain Current (ID, Tc=25°C, package-limited) — 100 A
Silicon-Limited Drain Current — 265 A
Power Dissipation (PD, Tc=25°C) — 156 W
On-Resistance RDS(on) max @ VGS=10V — 1.25 mΩ
On-Resistance RDS(on) typ @ VGS=10V — 0.95 mΩ
Gate Threshold Voltage VGS(th) typ — 1.7 V to 2.7 V
Input Capacitance (Ciss) max @ 25V — 6560 pF
Level MSL — 1
Status RoHS — Compliant
Bebas Halogen — Compliant
RthJC max — 0.96 °C/W (per datasheet)

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