IRFR4615TRLPBF vs IRFH7084TRPBF 比較

詳細並排比較 IRFR4615TRLPBF 由 Infineon 與 IRFH7084TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF ✓ 啟用中
Infineon
IRFH7084TRPBF IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon

IRFH7084TRPBF ✓ 啟用中

規格比較

參數 IRFR4615TRLPBF IRFH7084TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Technology IR MOSFET (N-Channel Enhancement Mode) StrongIRFET™ (trench MOSFET)
Drain-Source Voltage (VDS) 150 V 40 V
Continuous Drain Current (ID) at TC=25C 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max] ±20 V
On-Resistance RDS(on) max at VGS=10V 42 mOhm —
Total Gate Charge (Qg) 26 nC —
Gate-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Power Dissipation (PD) at TC=25C 144 W —
Avalanche Energy (EAS) 109 mJ —
工作溫度範圍 -55C to +175C -55°C to +175°C (TJ)
封裝 TO-252AA (DPAK) 8-PQFN 5x6 mm (SuperSO8)
安裝類型 Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix indicates Pb-free) —
單脈衝突崩能量 109 mJ —
FET Type — N-Channel
Continuous Drain Current (ID, Tc=25°C, package-limited) — 100 A
Silicon-Limited Drain Current — 265 A
Power Dissipation (PD, Tc=25°C) — 156 W
On-Resistance RDS(on) max @ VGS=10V — 1.25 mΩ
On-Resistance RDS(on) typ @ VGS=10V — 0.95 mΩ
Gate Threshold Voltage VGS(th) typ — 1.7 V to 2.7 V
Input Capacitance (Ciss) max @ 25V — 6560 pF
MSL 等級 — 1
RoHS 狀態 — Compliant
無鹵素 — Compliant
RthJC max — 0.96 °C/W (per datasheet)

資料表與資源

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