IRFR5305TRPBF vs IRFR2405TRPBF Perbandingan

Perbandingan bersamaan detil IRFR5305TRPBF dari Infineon dan IRFR2405TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR5305TRPBF IRFR2405TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) Max -55 V —
Continuous Drain Current (ID) at TC=25C 31 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance (RDS(on)) Max at VGS=-10V 65 mOhm —
Gate-Source Threshold Voltage (VGS(th)) -2 V to -4 V —
Gate Charge (Qg) Typ [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 110 W —
Single-Pulse Avalanche Energy (EAS) 270 mJ —
Rentang Suhu Kerja -55 C to +175 C —
Paket TO-252AA (DPAK) TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Level MSL 1 1
Status RoHS Compliant (Pb-free PBF suffix) Compliant (Lead-Free PBF suffix)
Lead-Free Finish Yes (PBF suffix) —
Manufacturer — Infineon Technologies
Part Status — Active
FET Type — N-Channel
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 56 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Total Gate Charge (Qg) — 70 nC
Power Dissipation (PD) at Tc=25C — 110 W
Suhu Hubung Kerja — -55C to +175C
Jumlah Pin — 3 (Gate, Drain, Source) + Tab
Bebas Halogen — [DATA_NEEDED: halogen-free status]
Avalanche Rated — Yes (100% avalanche tested)

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