IRFR5305TRPBF vs IRFR2405TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR5305TRPBF disebabkan oleh Infineon dan IRFR2405TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR5305TRPBF IRFR2405TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) Max -55 V —
Continuous Drain Current (ID) at TC=25C 31 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance (RDS(on)) Max at VGS=-10V 65 mOhm —
Gate-Source Threshold Voltage (VGS(th)) -2 V to -4 V —
Gate Charge (Qg) Typ [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25C 110 W —
Single-Pulse Avalanche Energy (EAS) 270 mJ —
Gambaran Suhu Operasi -55 C to +175 C —
Kemasan TO-252AA (DPAK) TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Aras MSL 1 1
Status RoHS Compliant (Pb-free PBF suffix) Compliant (Lead-Free PBF suffix)
Lead-Free Finish Yes (PBF suffix) —
Manufacturer — Infineon Technologies
Part Status — Active
FET Type — N-Channel
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 56 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Total Gate Charge (Qg) — 70 nC
Power Dissipation (PD) at Tc=25C — 110 W
Suhu Hubungan Operasi — -55C to +175C
Kiraan Pin — 3 (Gate, Drain, Source) + Tab
Boson Bebas — [DATA_NEEDED: halogen-free status]
Avalanche Rated — Yes (100% avalanche tested)

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