IRFR540ZTRLPBF vs IRFR540ZTRPBF Perbandingan

Perbandingan bersamaan detil IRFR540ZTRLPBF dari Infineon dan IRFR540ZTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IRFR540ZTRLPBF IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRFR540ZTRLPBF IRFR540ZTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC 35 A —
Pulsed Drain Current (IDM) 110 A —
Static Drain-Source On-Resistance (RDS(on)) 28.5 mΩ max at VGS=10V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±V rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical V] —
Total Gate Charge (Qg) 39 nC 39 nC
Power Dissipation (PD) at TC 91 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Technology IR MOSFET™ / HEXFET® IR MOSFET
Paket TO-252AA (DPAK) surface mount TO-252AA (DPAK) surface mount
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
Automotive Qualification AEC-Q101 qualified —
Lead-Free / RoHS Yes (PBF suffix) —
Packaging Tape & Reel (TR-L), 800-piece leader/trailer —
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) — 35 A (at Tc)
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
On-Resistance Rds(on) Max — 28.5 mOhm at Vgs=10V
Gate-Source Threshold Vgs(th) — [DATA_NEEDED: Vgs(th) typical value]
Power Dissipation (Pd) — 91 W (at Tc)
Rentang Suhu Kerja — -55 C to +175 C (junction)
Level MSL — 1 (unlimited floor life at <30 C / 85% RH)
Status RoHS — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Automotive Qualified — Yes (AEC-Q101)

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