IRFR540ZTRLPBF vs IRFR540ZTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR540ZTRLPBF disebabkan oleh Infineon dan IRFR540ZTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IRFR540ZTRLPBF IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF - 100V 35A N-Channel MOSFET | Infineon

IRFR540ZTRLPBF ✓ Aktif

Pengandingan Spesifikasi

Parametr IRFR540ZTRLPBF IRFR540ZTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC 35 A —
Pulsed Drain Current (IDM) 110 A —
Static Drain-Source On-Resistance (RDS(on)) 28.5 mΩ max at VGS=10V —
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±V rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical V] —
Total Gate Charge (Qg) 39 nC 39 nC
Power Dissipation (PD) at TC 91 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Technology IR MOSFET™ / HEXFET® IR MOSFET
Kemasan TO-252AA (DPAK) surface mount TO-252AA (DPAK) surface mount
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
Automotive Qualification AEC-Q101 qualified —
Lead-Free / RoHS Yes (PBF suffix) —
Packaging Tape & Reel (TR-L), 800-piece leader/trailer —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (Vds) — 100 V
Continuous Drain Current (Id) — 35 A (at Tc)
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
On-Resistance Rds(on) Max — 28.5 mOhm at Vgs=10V
Gate-Source Threshold Vgs(th) — [DATA_NEEDED: Vgs(th) typical value]
Power Dissipation (Pd) — 91 W (at Tc)
Gambaran Suhu Operasi — -55 C to +175 C (junction)
Aras MSL — 1 (unlimited floor life at <30 C / 85% RH)
Status RoHS — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Automotive Qualified — Yes (AEC-Q101)

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