IRFR5410TRPBF vs IPD50P04P4L11ATMA2 Perbandingan
Perbandingan bersamaan detil IRFR5410TRPBF dari Infineon dan IPD50P04P4L11ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFR5410TRPBF | IPD50P04P4L11ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TC = 25 °C | -13 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) typ | 70 nC | — |
| Paket | TO-252AA (DPAK), surface mount | PG-TO252-3-313 (DPAK), surface mount |
| Power Dissition (PD) at TC = 25 °C | 66 W | — |
| Rentang Suhu Kerja | -55 °C to +150 °C (TJ) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) | — |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | — |
| Level MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A | — |
| Tipe Transistor | — | P-Channel MOSFET, enhancement mode |
| Drain-Source Voltage VDS | — | -40 V |
| Continuous Drain Current ID (TC = 25 °C) | — | -50 A |
| On-State Resistance RDS(on) (VGS = -10 V) | — | 10.6 mΩ typical |
| Gate-Source Voltage VGS (max) | — | ±20 V |
| Gate Threshold Voltage VGS(th) | — | -1.0 V to -2.5 V typical |
| Typical Gate Charge Qg | — | 45 nC |
| Power Dissipation PD (TC = 25 °C) | — | 58 W |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |
| Jumlah Pin | — | 3 (Drain / Tab / Source / Gate) |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant |