IRFR5410TRRPBF vs IPD50P04P4L11ATMA2 Perbandingan

Perbandingan bersamaan detil IRFR5410TRRPBF dari Infineon dan IPD50P04P4L11ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD50P04P4L11ATMA2 IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRFR5410TRRPBF IPD50P04P4L11ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
FET Type MOSFET (Metal Oxide Semiconductor) —
Technology HEXFET (5th Generation) —
VDS (Drain-Source Voltage) -100 V —
VGS (Gate-Source Voltage) ±20 V —
VGS(th) (Gate Threshold) -2 V to -4 V —
Continuous Drain Current (ID) at Tc=25C -13 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at 100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) max at VGS=-10V 205 mΩ —
RDS(on) typical at VGS=-10V 26 mΩ (per Mouser listing for IRFR5410TRPBF) —
Total Gate Charge (Qg) 70 nC —
Power Dissipation (Pd) at Tc=25C 66 W —
Suhu Hubung Kerja -55C to +150C -55 °C to +175 °C
Paket TO-252AA (DPAK) PG-TO252-3-313 (DPAK), surface mount
Tipe Mounting Surface Mount Surface Mount
Avalanche Rated Yes —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) —
Tipe Transistor — P-Channel MOSFET, enhancement mode
Drain-Source Voltage VDS — -40 V
Continuous Drain Current ID (TC = 25 °C) — -50 A
On-State Resistance RDS(on) (VGS = -10 V) — 10.6 mΩ typical
Gate-Source Voltage VGS (max) — ±20 V
Gate Threshold Voltage VGS(th) — -1.0 V to -2.5 V typical
Typical Gate Charge Qg — 45 nC
Power Dissipation PD (TC = 25 °C) — 58 W
Jumlah Pin — 3 (Drain / Tab / Source / Gate)
Automotive Qualification — AEC-Q101 qualified
RoHS Compliance — Compliant
Level MSL — [DATA_NEEDED: MSL rating]

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