IRFR5410TRRPBF vs IPD50P04P4L11ATMA2 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5410TRRPBF sa pamamagitan ng Infineon at IPD50P04P4L11ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRFR5410TRRPBF IRFR5410TRRPBF - P-CH 100V 13A HEXFET MOSFET | Infineon

IRFR5410TRRPBF - P-CH 100V 13A HEXFET MOSFET | Infineon

IRFR5410TRRPBF ✓ Nakahanda
Infineon
IPD50P04P4L11ATMA2 IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon

IPD50P04P4L11ATMA2 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRFR5410TRRPBF IPD50P04P4L11ATMA2
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel —
FET Type MOSFET (Metal Oxide Semiconductor) —
Technology HEXFET (5th Generation) —
VDS (Drain-Source Voltage) -100 V —
VGS (Gate-Source Voltage) ±20 V —
VGS(th) (Gate Threshold) -2 V to -4 V —
Continuous Drain Current (ID) at Tc=25C -13 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at 100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) max at VGS=-10V 205 mΩ —
RDS(on) typical at VGS=-10V 26 mΩ (per Mouser listing for IRFR5410TRPBF) —
Total Gate Charge (Qg) 70 nC —
Power Dissipation (Pd) at Tc=25C 66 W —
Temperature ng Junction na Operasyon -55C to +150C -55 °C to +175 °C
Packhaging TO-252AA (DPAK) PG-TO252-3-313 (DPAK), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Avalanche Rated Yes —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) —
Uri ng Transistor — P-Channel MOSFET, enhancement mode
Drain-Source Voltage VDS — -40 V
Continuous Drain Current ID (TC = 25 °C) — -50 A
On-State Resistance RDS(on) (VGS = -10 V) — 10.6 mΩ typical
Gate-Source Voltage VGS (max) — ±20 V
Gate Threshold Voltage VGS(th) — -1.0 V to -2.5 V typical
Typical Gate Charge Qg — 45 nC
Power Dissipation PD (TC = 25 °C) — 58 W
Bilang ng Pin — 3 (Drain / Tab / Source / Gate)
Automotive Qualification — AEC-Q101 qualified
RoHS Compliance — Compliant
Level ng MSL — [DATA_NEEDED: MSL rating]

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita