IRFS4010TRLPBF vs IRF5305STRLPBF Perbandingan

Perbandingan bersamaan detil IRFS4010TRLPBF dari Infineon dan IRF5305STRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IRF5305STRLPBF IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRFS4010TRLPBF IRF5305STRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET —
Technology IR MOSFET (HEXFET) HEXFET (fifth generation), IR MOSFET
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 180 A -31 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) max @ VGS=10V 4.7 mOhm —
Gate-to-Source Voltage (VGS) max Plus or minus 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) 143 nC 42 nC (Mouser listing) / 63 nC (Future Electronics listing)
Power Dissipation (PD) at TC=25C 375 W —
Suhu Hubung Kerja -55C to +175C —
Paket D2PAK (TO-263AB), surface mount TO-263 / D2PAK (surface mount)
Tipe Mounting Surface Mount Surface Mount
Gate Drive Voltage 10 V (normal level, optimized) —
Status RoHS Compliant —
Level MSL 1 —
Qualification JEDEC standard —
Polarity / Channel Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TA=25C — [DATA_NEEDED: ID at TA=25C]
RDS(on) max at VGS=-10V — 60 mOhm
RDS(on) max at VGS=-4.5V — [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typ]
Maximum Power Dissition at Tc — 110 W
Maximum Power Dissipation at TA — 3.8 W
Rentang Suhu Kerja — [DATA_NEEDED: Tj max / operating range]
Packaging — Tape & Reel (TR), 800 pcs per reel
Lead-Free / RoHS — Yes (Pb-free suffix PBF)

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