IRFS4010TRLPBF vs IRF5305STRLPBF 比較
詳細並排比較 IRFS4010TRLPBF 由 Infineon 與 IRF5305STRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFS4010TRLPBF | IRF5305STRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel MOSFET | — |
| Technology | IR MOSFET (HEXFET) | HEXFET (fifth generation), IR MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 180 A | -31 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| RDS(on) max @ VGS=10V | 4.7 mOhm | — |
| Gate-to-Source Voltage (VGS) max | Plus or minus 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge (Qg) | 143 nC | 42 nC (Mouser listing) / 63 nC (Future Electronics listing) |
| Power Dissipation (PD) at TC=25C | 375 W | — |
| 工作接面溫度 | -55C to +175C | — |
| 封裝 | D2PAK (TO-263AB), surface mount | TO-263 / D2PAK (surface mount) |
| 安裝類型 | Surface Mount | Surface Mount |
| Gate Drive Voltage | 10 V (normal level, optimized) | — |
| RoHS 狀態 | Compliant | — |
| MSL 等級 | 1 | — |
| Qualification | JEDEC standard | — |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TA=25C | — | [DATA_NEEDED: ID at TA=25C] |
| RDS(on) max at VGS=-10V | — | 60 mOhm |
| RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Maximum Power Dissition at Tc | — | 110 W |
| Maximum Power Dissipation at TA | — | 3.8 W |
| 工作溫度範圍 | — | [DATA_NEEDED: Tj max / operating range] |
| Packaging | — | Tape & Reel (TR), 800 pcs per reel |
| Lead-Free / RoHS | — | Yes (Pb-free suffix PBF) |