IRFS4010TRLPBF vs IRF5305STRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFS4010TRLPBF disebabkan oleh Infineon dan IRF5305STRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IRF5305STRLPBF IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF ✓ Aktif

Pengandingan Spesifikasi

Parametr IRFS4010TRLPBF IRF5305STRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET —
Technology IR MOSFET (HEXFET) HEXFET (fifth generation), IR MOSFET
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 180 A -31 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) max @ VGS=10V 4.7 mOhm —
Gate-to-Source Voltage (VGS) max Plus or minus 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Total Gate Charge (Qg) 143 nC 42 nC (Mouser listing) / 63 nC (Future Electronics listing)
Power Dissipation (PD) at TC=25C 375 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan D2PAK (TO-263AB), surface mount TO-263 / D2PAK (surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Gate Drive Voltage 10 V (normal level, optimized) —
Status RoHS Compliant —
Aras MSL 1 —
Qualification JEDEC standard —
Polarity / Channel Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TA=25C — [DATA_NEEDED: ID at TA=25C]
RDS(on) max at VGS=-10V — 60 mOhm
RDS(on) max at VGS=-4.5V — [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typ]
Maximum Power Dissition at Tc — 110 W
Maximum Power Dissipation at TA — 3.8 W
Gambaran Suhu Operasi — [DATA_NEEDED: Tj max / operating range]
Packaging — Tape & Reel (TR), 800 pcs per reel
Lead-Free / RoHS — Yes (Pb-free suffix PBF)

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