IRFZ24NPBF vs IRFR220NPBF Perbandingan
Perbandingan bersamaan detil IRFZ24NPBF dari Infineon dan IRFR220NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFZ24NPBF | IRFR220NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) at TC=25C | 17 A | 5 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) | ± 20 V | — |
| RDS(on) at VGS=10V | 70 mOhm (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | 13.3 nC | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25C | 45 W | 43 W |
| Suhu Hubung Kerja | -55C to +175C | — |
| Paket | TO-220AB (through hole) | — |
| Tipe Mounting | Through Hole | Surface Mount |
| Technology | HEXFET planar cell | HEXFET (Planar) |
| Switching Frequency Range | Optimized for < 100 kHz | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Qualification | JEDEC standard | — |
| Channel Mode | Enhancement | — |
| Static Drain-Source On-Resistance (RDS(on)) max | — | 0.6 ohm at VGS = 10 V |
| Paket / Case | — | TO-252AA (DPAK) |
| Rentang Suhu Kerja | — | -55C to +150C (junction) |
| Lead-Free / RoHS | — | Yes, lead-free (PBF suffix) |
| Avalanche Energy Rated | — | Yes (per datasheet characterization) |
| Jumlah Pin | — | 3 (Gate, Drain, Source) plus tab |
| Level MSL | — | 1 (per JEDEC J-STD-020) |