IRLML0030TRPBF vs IRLML2060TRPBF Perbandingan
Perbandingan bersamaan detil IRLML0030TRPBF dari Infineon dan IRLML2060TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLML0030TRPBF | IRLML2060TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 5.3 A | 1.2 A |
| Drain-Source On-Resistance (RDS(on)) max | 27 mOhm at VGS=4.5V | — |
| Gate-Source Threshold Voltage (VGS(th)) | Logic-level (5 V optimized) | — |
| Total Gate Charge (Qg) | 3.6 nC typical | — |
| Power Dissipation (PD) at TA=25C | 1.3 W | 1.25 W |
| Rentang Suhu Kerja | -55C to +150C | — |
| Paket | Micro3 / SOT-23 (3-pin) | SOT-23 (Micro3, 3-pin) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | IR HEXFET Power MOSFET | IR HEXFET (Trench Gate) |
| Level MSL | 1 (unlimited floor life per JEDEC J-STD-020) | MSL1 |
| Soldering | Wave-solder capable | — |
| Qualification | JEDEC standard | — |
| Status RoHS | Compliant | Compliant |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Pulsed Drain Current (IDM) | — | 4.8 A |
| Gate-to-Source Voltage (VGS) max | — | +/- 12 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.8 V typical |
| RDS(on) max at VGS=10V | — | 480 mOhm |
| RDS(on) max at VGS=4.5V | — | 650 mOhm (typical 580 mOhm) |
| Thermal Resistance Junction-to-Ambient (RthetaJA) | — | 100 C/W |
| Suhu Hubung Kerja | — | -55C to +150C |
| Bebas Halogen | — | Yes |