IRLML0030TRPBF vs IRLML2060TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLML0030TRPBF sa pamamagitan ng Infineon at IRLML2060TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLML0030TRPBF | IRLML2060TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 5.3 A | 1.2 A |
| Drain-Source On-Resistance (RDS(on)) max | 27 mOhm at VGS=4.5V | — |
| Gate-Source Threshold Voltage (VGS(th)) | Logic-level (5 V optimized) | — |
| Total Gate Charge (Qg) | 3.6 nC typical | — |
| Power Dissipation (PD) at TA=25C | 1.3 W | 1.25 W |
| Hanay ng Temperature na Operasyon | -55C to +150C | — |
| Packhaging | Micro3 / SOT-23 (3-pin) | SOT-23 (Micro3, 3-pin) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | IR HEXFET Power MOSFET | IR HEXFET (Trench Gate) |
| Level ng MSL | 1 (unlimited floor life per JEDEC J-STD-020) | MSL1 |
| Soldering | Wave-solder capable | — |
| Qualification | JEDEC standard | — |
| Tindminan RoHS | Compliant | Compliant |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Pulsed Drain Current (IDM) | — | 4.8 A |
| Gate-to-Source Voltage (VGS) max | — | +/- 12 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.8 V typical |
| RDS(on) max at VGS=10V | — | 480 mOhm |
| RDS(on) max at VGS=4.5V | — | 650 mOhm (typical 580 mOhm) |
| Thermal Resistance Junction-to-Ambient (RthetaJA) | — | 100 C/W |
| Temperature ng Junction na Operasyon | — | -55C to +150C |
| Wala sa Halogen | — | Yes |