IRLML6246TRPBF vs IRLML0030TRPBF Perbandingan

Perbandingan bersamaan detil IRLML6246TRPBF dari Infineon dan IRLML0030TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLML6246TRPBF IRLML0030TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLML6246TRPBF —
Technology IR MOSFET (HEXFET Power MOSFET) IR HEXFET Power MOSFET
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 20 V —
Continuous Drain Current (ID) at Ta=25C 4.1 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
On-Resistance RDS(on) max @ VGS=4.5V 46 mOhm —
On-Resistance RDS(on) max @ VGS=2.5V [DATA_NEEDED: RDS(on) at 2.5V] —
Gate Threshold Voltage VGS(th) typ 1.1 V (logic-level) —
Gate Charge Qg typ [DATA_NEEDED: Qg total gate charge] —
Power Dissipation (Ta=25C) 1.3 W —
Rentang Suhu Kerja -55C to +150C (junction) -55C to +150C
Paket SOT-23 (Micro3) Micro3 / SOT-23 (3-pin)
Tipe Mounting Surface Mount Surface Mount
RoHS Compliance Yes (Pb-free) —
Bebas Halogen Yes —
Level MSL MSL1 (per JEDEC J-STD-020) 1 (unlimited floor life per JEDEC J-STD-020)
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 5.3 A
Drain-Source On-Resistance (RDS(on)) max — 27 mOhm at VGS=4.5V
Gate-Source Threshold Voltage (VGS(th)) — Logic-level (5 V optimized)
Total Gate Charge (Qg) — 3.6 nC typical
Power Dissipation (PD) at TA=25C — 1.3 W
Soldering — Wave-solder capable
Qualification — JEDEC standard
Status RoHS — Compliant

Spek dan Sumber

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