IRLML6246TRPBF vs IRLML0030TRPBF 比較

詳細並排比較 IRLML6246TRPBF 由 Infineon 與 IRLML0030TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLML6246TRPBF IRLML6246TRPBF - 20V N-Channel HEXFET MOSFET | Infineon

IRLML6246TRPBF - 20V N-Channel HEXFET MOSFET | Infineon

IRLML6246TRPBF ✓ 啟用中
Infineon
IRLML0030TRPBF IRLML0030TRPBF - 30V N-Channel HEXFET MOSFET | Infineon

IRLML0030TRPBF - 30V N-Channel HEXFET MOSFET | Infineon

IRLML0030TRPBF ✓ 啟用中

規格比較

參數 IRLML6246TRPBF IRLML0030TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLML6246TRPBF —
Technology IR MOSFET (HEXFET Power MOSFET) IR HEXFET Power MOSFET
FET Type N-Channel N-Channel
Drain-to-Source Voltage (VDS) 20 V —
Continuous Drain Current (ID) at Ta=25C 4.1 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] —
On-Resistance RDS(on) max @ VGS=4.5V 46 mOhm —
On-Resistance RDS(on) max @ VGS=2.5V [DATA_NEEDED: RDS(on) at 2.5V] —
Gate Threshold Voltage VGS(th) typ 1.1 V (logic-level) —
Gate Charge Qg typ [DATA_NEEDED: Qg total gate charge] —
Power Dissipation (Ta=25C) 1.3 W —
工作溫度範圍 -55C to +150C (junction) -55C to +150C
封裝 SOT-23 (Micro3) Micro3 / SOT-23 (3-pin)
安裝類型 Surface Mount Surface Mount
RoHS Compliance Yes (Pb-free) —
無鹵素 Yes —
MSL 等級 MSL1 (per JEDEC J-STD-020) 1 (unlimited floor life per JEDEC J-STD-020)
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25C — 5.3 A
Drain-Source On-Resistance (RDS(on)) max — 27 mOhm at VGS=4.5V
Gate-Source Threshold Voltage (VGS(th)) — Logic-level (5 V optimized)
Total Gate Charge (Qg) — 3.6 nC typical
Power Dissipation (PD) at TA=25C — 1.3 W
Soldering — Wave-solder capable
Qualification — JEDEC standard
RoHS 狀態 — Compliant

資料表與資源

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