IRLML6246TRPBF vs IRLML6346TRPBF Perbandingan

Perbandingan bersamaan detil IRLML6246TRPBF dari Infineon dan IRLML6346TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLML6246TRPBF IRLML6346TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLML6246TRPBF —
Technology IR MOSFET (HEXFET Power MOSFET) HEXFET Power MOSFET
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 20 V —
Continuous Drain Current (ID) at Ta=25C 4.1 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed value] [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=4.5V 46 mOhm —
On-Resistance RDS(on) max @ VGS=2.5V [DATA_NEEDED: RDS(on) at 2.5V] —
Gate Threshold Voltage VGS(th) typ 1.1 V (logic-level) —
Gate Charge Qg typ [DATA_NEEDED: Qg total gate charge] —
Power Dissipation (Ta=25C) 1.3 W —
Rentang Suhu Kerja -55C to +150C (junction) —
Paket SOT-23 (Micro3) Micro3 / SOT-23
Tipe Mounting Surface Mount Surface Mount
RoHS Compliance Yes (Pb-free) —
Bebas Halogen Yes —
Level MSL MSL1 (per JEDEC J-STD-020) 1
Polarity — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) — 3.4 A (TA=25C)
RDS(on) max @ VGS=2.5V — 63 mOhm
RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Gate Drive Capability — 2.5V logic-level
Maximum Power Dissipation (PD) — 1.3 W (TA=25C, 1in2 FR4)
Suhu Hubung Kerja — -55C to +150C
Lead-Free Finish — Yes (PBF suffix)
Status RoHS — Compliant

Spek dan Sumber

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