IRLR2705TRLPBF vs IRLR2905TRPBF Perbandingan
Perbandingan bersamaan detil IRLR2705TRLPBF dari Infineon dan IRLR2905TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLR2705TRLPBF | IRLR2905TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET (HexFET) | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at TC=25C | 28 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 40 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V (logic-level) | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Power Dissipation (PD) at TC=25C | 68 W | — |
| Rentang Suhu Kerja | -55C to +175C | — |
| Paket | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Avalanche Rated | Yes (fully avalanche rated) | Yes |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | — |
| Technology | IR MOSFET (HEXFET, 5th generation) | HEXFET (IR MOSFET, fifth generation) |
| Configuration | Single N-Channel | — |
| Level MSL | 1 (unlimited floor life at <30C / 85% RH) | [DATA_NEEDED: MSL rating] |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 42 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max @ VGS=10V | — | 27 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge (Qg) | — | 32 nC |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Suhu Hubung Kerja | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes / Compliant |
| Gate Drive | — | Logic-level compatible |