IRLR3105TRPBF vs IRLR2705TRPBF Perbandingan

Perbandingan bersamaan detil IRLR3105TRPBF dari Infineon dan IRLR2705TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLR3105TRPBF IRLR2705TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET generation 5)
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc 25 A —
Rds(on) max @ VGS=10V 37 mOhm —
Rds(on) max @ VGS=5V [DATA_NEEDED: Rds(on) at 5V] —
Total Gate Charge (Qg) 13.3 nC 16.7 nC
Gate-Source Voltage (VGS) max ±16 V —
Input Capacitance (Ciss) 710 pF @ 25 V —
Power Dissipation (Pd) at Tc 57 W —
Rentang Suhu Kerja [DATA_NEEDED: TJ min/max] —
Paket TO-252AA (DPAK, 2 leads + tab) TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Gate Drive Type Logic-Level —
Status RoHS Compliant —
Packaging Tape & Reel (TRPBF) —
Supplier Device Package TO-252AA (DPAK) —
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 28 A
Continuous Drain Current (ID) at TA=25C — [DATA_NEEDED: ID at TA=25C with 1in2 copper]
RDS(on) Max at VGS=10V — 40 mOhm
RDS(on) Max at VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Gate-to-Source Voltage (VGS) Max — [DATA_NEEDED: VGS absolute max, +/-V]
Gate Threshold Voltage (VGS(th)) — Logic-Level (compatible with 4V drive)
Power Dissipation (PD) at Tc=25C — 68 W
Power Dissipation (PD) at TA=25C — [DATA_NEEDED: PD at TA=25C with 1in2 copper]
Suhu Hubung Kerja — -55C to +175C
Avalanche Rated — Yes
Lead-Free / RoHS — Yes (Pb-free, RoHS compliant)
Level MSL — [DATA_NEEDED: MSL rating per JEDEC J-STD-020]

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