IRLR3410TRLPBF vs IRL540NSTRLPBF Perbandingan

Perbandingan bersamaan detil IRLR3410TRLPBF dari Infineon dan IRL540NSTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLR3410TRLPBF IRL540NSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLR3410TRLPBF —
Technology HEXFET (5th generation) N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25C 17 A —
Pulsed Drain Current (IDM) 60 A [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 105 mOhm —
On-Resistance RDS(on) max @ VGS=5V [DATA_NEEDED: RDS(on) @ VGS=5V] —
Gate-Source Threshold VGS(th) typ 2.0 V —
Total Gate Charge (Qg) 22.7 nC 49.3 nC
Gate Drive Level Logic level (5V capable) —
Power Dissipation (PD) at TC=25C 79 W —
Suhu Hubung Kerja -55C to +175C —
Paket TO-252AA (DPAK), surface mount TO-263 (D2PAK)
Tipe Mounting Surface Mount (tape and reel) Surface Mount
RoHS Compliance Compliant (Pb-free) —
Level MSL 1 [DATA_NEEDED: MSL rating]
Avalanche Rated Yes (UIS tested) —
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25°C — 36 A
On-Resistance (RDS(on)) max @ VGS=10V — 44 mΩ
On-Resistance (RDS(on)) max @ VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Gate-Source Voltage (VGS) max — ±16 V
Gate Threshold Voltage (VGS(th)) — Logic-level
Power Dissipation (PD) at Tc=25°C — 140 W
Power Dissipation (PD) at TA=25°C — 3.8 W
Rentang Suhu Kerja — -55°C to +175°C
Avalanche Energy Rated — Yes (single-pulse)
Status RoHS — Compliant (LPBF suffix indicates lead-free)

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