IRLR3410TRLPBF vs IRL540NSTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR3410TRLPBF disebabkan oleh Infineon dan IRL540NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLR3410TRLPBF IRL540NSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRLR3410TRLPBF —
Technology HEXFET (5th generation) N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID) at TC=25C 17 A —
Pulsed Drain Current (IDM) 60 A [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V 105 mOhm —
On-Resistance RDS(on) max @ VGS=5V [DATA_NEEDED: RDS(on) @ VGS=5V] —
Gate-Source Threshold VGS(th) typ 2.0 V —
Total Gate Charge (Qg) 22.7 nC 49.3 nC
Gate Drive Level Logic level (5V capable) —
Power Dissipation (PD) at TC=25C 79 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan TO-252AA (DPAK), surface mount TO-263 (D2PAK)
Jenis Pemasangan Surface Mount (tape and reel) Surface Mount
RoHS Compliance Compliant (Pb-free) —
Aras MSL 1 [DATA_NEEDED: MSL rating]
Avalanche Rated Yes (UIS tested) —
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25°C — 36 A
On-Resistance (RDS(on)) max @ VGS=10V — 44 mΩ
On-Resistance (RDS(on)) max @ VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Gate-Source Voltage (VGS) max — ±16 V
Gate Threshold Voltage (VGS(th)) — Logic-level
Power Dissipation (PD) at Tc=25°C — 140 W
Power Dissipation (PD) at TA=25°C — 3.8 W
Gambaran Suhu Operasi — -55°C to +175°C
Avalanche Energy Rated — Yes (single-pulse)
Status RoHS — Compliant (LPBF suffix indicates lead-free)

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