IRLR7843TRPBF vs BSC016N06NSATMA1 Perbandingan
Perbandingan bersamaan detil IRLR7843TRPBF dari Infineon dan BSC016N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLR7843TRPBF | BSC016N06NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Drain-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 161 A | — |
| Power Dissipation (Pd) @ Tc=25C | 140 W | — |
| On-Resistance Rds(on) Max @ Vgs=10V | 3.3 mOhm | — |
| On-Resistance Rds(on) Max @ Vgs=4.5V | 4.5 mOhm (typ) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 34 nC | 71 nC |
| Gate-to-Source Voltage Max | ±20 V | — |
| Avalanche Energy (Eas) | Fully characterized | — |
| Rentang Suhu Kerja | -55C to +175C | -55 °C to +150 °C |
| Paket | TO-252AA (DPAK) | PG-TDSON-8 FL (SuperSO8 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET | OptiMOS™ 5 |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS™ 5 60V |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, TA) | — | 30 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.6 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 139 W |
| Level MSL | — | 1 (unlimited) |
| Status RoHS | — | Compliant |
| Gate Drive (recommended) | — | 10 V |