IRLR7843TRPBF vs BSC016N06NSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR7843TRPBF disebabkan oleh Infineon dan BSC016N06NSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLR7843TRPBF | BSC016N06NSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Drain-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 161 A | — |
| Power Dissipation (Pd) @ Tc=25C | 140 W | — |
| On-Resistance Rds(on) Max @ Vgs=10V | 3.3 mOhm | — |
| On-Resistance Rds(on) Max @ Vgs=4.5V | 4.5 mOhm (typ) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 34 nC | 71 nC |
| Gate-to-Source Voltage Max | ±20 V | — |
| Avalanche Energy (Eas) | Fully characterized | — |
| Gambaran Suhu Operasi | -55C to +175C | -55 °C to +150 °C |
| Kemasan | TO-252AA (DPAK) | PG-TDSON-8 FL (SuperSO8 5x6) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET | OptiMOS™ 5 |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS™ 5 60V |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, TA) | — | 30 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.6 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 139 W |
| Aras MSL | — | 1 (unlimited) |
| Status RoHS | — | Compliant |
| Gate Drive (recommended) | — | 10 V |