IRLR7843TRPBF vs BSC016N06NSATMA1 比較
詳細並排比較 IRLR7843TRPBF 由 Infineon 與 BSC016N06NSATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLR7843TRPBF | BSC016N06NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (Vdss) | 30 V | — |
| Continuous Drain Current (Id) @ Tc=25C | 161 A | — |
| Power Dissipation (Pd) @ Tc=25C | 140 W | — |
| On-Resistance Rds(on) Max @ Vgs=10V | 3.3 mOhm | — |
| On-Resistance Rds(on) Max @ Vgs=4.5V | 4.5 mOhm (typ) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 34 nC | 71 nC |
| Gate-to-Source Voltage Max | ±20 V | — |
| Avalanche Energy (Eas) | Fully characterized | — |
| 工作溫度範圍 | -55C to +175C | -55 °C to +150 °C |
| 封裝 | TO-252AA (DPAK) | PG-TDSON-8 FL (SuperSO8 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | HEXFET | OptiMOS™ 5 |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS™ 5 60V |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 100 A |
| Continuous Drain Current (ID, TA) | — | 30 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.6 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation (TA) | — | 2.5 W |
| Power Dissipation (TC) | — | 139 W |
| MSL 等級 | — | 1 (unlimited) |
| RoHS 狀態 | — | Compliant |
| Gate Drive (recommended) | — | 10 V |