IRS2011STRPBF vs IR25606STRPBF Perbandingan

Perbandingan bersamaan detil IRS2011STRPBF dari Infineon dan IR25606STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS2011STRPBF IR25606STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Fungsi Half-Bridge Gate Driver Half-Bridge Gate Driver
Configuration High-Side and Low-Side, Independent Channels Non-Inverting, High-Side and Low-Side
Jumlah Output 2 2 (High Side / Low Side)
Maximum Offset Voltage (High-Side) 200 V —
Output Current (Source / Sink) 1 A typical / 1 A typical —
Propagation Delay (ton/toff) 60 ns typical —
Delay Matching 20 ns maximum —
Logic Input Compatibility 3.3 V CMOS / LSTTL —
Bootstrap Supply Integrated bootstrap diode, floating channel —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Negative Transient Tolerance Yes, dV/dt immune —
Paket 8-SOIC (DSO-8) 8-SOIC (0.154", 3.90 mm width)
Suhu Kerja -40 C to +125 C -40 C to +125 C
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant (PBF suffix) Compliant (PBF suffix)
Suitable Drivers MOSFETs and IGBTs —
Number of Drivers — 2
Driven Configuration — Half-Bridge
High-Side Voltage (Offset) — Up to 600 V
Logic Input Voltage — Compatible with 3.3 V and 5 V logic
Source Current (typ.) — 200 mA
Sink Current (typ.) — 350 mA
Input Type — Non-Inverting
Rise Time (typ.) — [DATA_NEEDED: rise time]
Fall Time (typ.) — [DATA_NEEDED: fall time]
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay]
Under-Voltage Lockout (UVLO) — Yes, on VCC and VB
Shoot-Through Protection — Integrated
Level MSL — [DATA_NEEDED: MSL level]
Lead-Free — Yes (PBF suffix)
Packaging — Tape and Reel (TR suffix)

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