IRS2011STRPBF vs IR25606STRPBF 比較

詳細並排比較 IRS2011STRPBF 由 Infineon 與 IR25606STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRS2011STRPBF IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF ✓ 啟用中
Infineon
IR25606STRPBF IR25606STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR25606STRPBF - 600V Half-Bridge Gate Driver IC | Infineon

IR25606STRPBF ✓ 啟用中

規格比較

參數 IRS2011STRPBF IR25606STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Half-Bridge Gate Driver Half-Bridge Gate Driver
Configuration High-Side and Low-Side, Independent Channels Non-Inverting, High-Side and Low-Side
輸出數量 2 2 (High Side / Low Side)
Maximum Offset Voltage (High-Side) 200 V —
Output Current (Source / Sink) 1 A typical / 1 A typical —
Propagation Delay (ton/toff) 60 ns typical —
Delay Matching 20 ns maximum —
Logic Input Compatibility 3.3 V CMOS / LSTTL —
Bootstrap Supply Integrated bootstrap diode, floating channel —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Negative Transient Tolerance Yes, dV/dt immune —
封裝 8-SOIC (DSO-8) 8-SOIC (0.154", 3.90 mm width)
工作溫度 -40 C to +125 C -40 C to +125 C
安裝類型 Surface Mount Surface Mount
RoHS 狀態 Compliant (PBF suffix) Compliant (PBF suffix)
Suitable Drivers MOSFETs and IGBTs —
Number of Drivers — 2
Driven Configuration — Half-Bridge
High-Side Voltage (Offset) — Up to 600 V
Logic Input Voltage — Compatible with 3.3 V and 5 V logic
Source Current (typ.) — 200 mA
Sink Current (typ.) — 350 mA
Input Type — Non-Inverting
Rise Time (typ.) — [DATA_NEEDED: rise time]
Fall Time (typ.) — [DATA_NEEDED: fall time]
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay]
Under-Voltage Lockout (UVLO) — Yes, on VCC and VB
Shoot-Through Protection — Integrated
MSL 等級 — [DATA_NEEDED: MSL level]
Lead-Free — Yes (PBF suffix)
Packaging — Tape and Reel (TR suffix)

資料表與資源

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