IRS2101STRPBF vs IRS2011STRPBF Perbandingan

Perbandingan bersamaan detil IRS2101STRPBF dari Infineon dan IRS2011STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS2101STRPBF IRS2011STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Type High-Side, Low-Side (Half-Bridge) —
Number of Drivers 2 —
Jumlah Output 2-OUT 2
Konfigurasi Output Non-Inverting —
Maximum Offset Voltage 600 V —
Gate Drive Supply (VCC) 10 V to 20 V —
Bootstrap Supply (VBS) 10 V to 20 V —
Source Current (typical) 0.29 A —
Sink Current (typical) 0.6 A —
Logic Input Compatibility 3.3 V / 5 V / 15 V 3.3 V CMOS / LSTTL
VS Transient Range -5 V to +600 V (logic operational) —
Undervoltage Lockout Yes (VCC and VBS) —
Propagation Delay Matching Matched both channels —
dV/dt Immunity Yes (latch-immune CMOS) —
Suhu Kerja -40C to +125C -40 C to +125 C
Paket 8-SOIC (SOIC-8) 8-SOIC (DSO-8)
Tipe Mounting Surface Mount Surface Mount
Packaging Tape & Reel (TRPBF) —
Technology HVIC + latch-immune CMOS —
Status RoHS Compliant (PBF suffix) Compliant (PBF suffix)
Fungsi — Half-Bridge Gate Driver
Configuration — High-Side and Low-Side, Independent Channels
Maximum Offset Voltage (High-Side) — 200 V
Output Current (Source / Sink) — 1 A typical / 1 A typical
Propagation Delay (ton/toff) — 60 ns typical
Delay Matching — 20 ns maximum
Bootstrap Supply — Integrated bootstrap diode, floating channel
Supply Voltage (VCC) — 10 V to 20 V
Negative Transient Tolerance — Yes, dV/dt immune
Suitable Drivers — MOSFETs and IGBTs

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon