IRS2101STRPBF vs IRS2011STRPBF 比較

詳細並排比較 IRS2101STRPBF 由 Infineon 與 IRS2011STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRS2011STRPBF IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF ✓ 啟用中

規格比較

參數 IRS2101STRPBF IRS2011STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Driver Type High-Side, Low-Side (Half-Bridge) —
Number of Drivers 2 —
輸出數量 2-OUT 2
輸出配置 Non-Inverting —
Maximum Offset Voltage 600 V —
Gate Drive Supply (VCC) 10 V to 20 V —
Bootstrap Supply (VBS) 10 V to 20 V —
Source Current (typical) 0.29 A —
Sink Current (typical) 0.6 A —
Logic Input Compatibility 3.3 V / 5 V / 15 V 3.3 V CMOS / LSTTL
VS Transient Range -5 V to +600 V (logic operational) —
Undervoltage Lockout Yes (VCC and VBS) —
Propagation Delay Matching Matched both channels —
dV/dt Immunity Yes (latch-immune CMOS) —
工作溫度 -40C to +125C -40 C to +125 C
封裝 8-SOIC (SOIC-8) 8-SOIC (DSO-8)
安裝類型 Surface Mount Surface Mount
Packaging Tape & Reel (TRPBF) —
Technology HVIC + latch-immune CMOS —
RoHS 狀態 Compliant (PBF suffix) Compliant (PBF suffix)
功能 — Half-Bridge Gate Driver
Configuration — High-Side and Low-Side, Independent Channels
Maximum Offset Voltage (High-Side) — 200 V
Output Current (Source / Sink) — 1 A typical / 1 A typical
Propagation Delay (ton/toff) — 60 ns typical
Delay Matching — 20 ns maximum
Bootstrap Supply — Integrated bootstrap diode, floating channel
Supply Voltage (VCC) — 10 V to 20 V
Negative Transient Tolerance — Yes, dV/dt immune
Suitable Drivers — MOSFETs and IGBTs

資料表與資源

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