IRS2153DSPBF vs IRS2153DPBF Perbandingan

Perbandingan bersamaan detil IRS2153DSPBF dari Infineon dan IRS2153DPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRS2153DSPBF IRS2153DPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif NRND
Fungsi Half-bridge gate driver with RC input oscillator —
Configuration High-side + low-side driver, half-bridge —
Jumlah Output 2 (HO, LO) 2 (High-Side, Low-Side)
Maximum Offset Voltage (Voffset) 600 V —
VCC Supply Voltage 10 V to 20 V [DATA_NEEDED: VCC range]
VBS High-side Supply Voltage VCC + 0.3 V (typical bootstrap) —
Gate Drive Source Current (IO+) 130 mA typical —
Gate Drive Sink Current (IO-) 270 mA typical —
Rise Time (tr) [DATA_NEEDED: tr] (typical ~100 ns) —
Fall Time (tf) [DATA_NEEDED: tf] (typical ~50 ns) —
Internal Deadtime ~1.2 us —
Suhu Kerja -40 C to +125 C —
Paket 8-SOIC (SOIC-8) 8-Pin PDIP (through-hole)
Input Type RC-input oscillator (no external PWM required) —
Logic Polarity Inverting / Non-inverting per channel —
Undervoltage Lockout Yes (VCC) —
Technology HVIC + latch-immune CMOS —
Tipe Mounting Surface Mount —
Product Type — Half-Bridge Gate Driver IC
Driver Configuration — Half-Bridge (High-Side + Low-Side)
Topologi — Self-Oscillating (RC-timed)
Offset Voltage (High-Side) — 600 V (max)
Output Current (Source, typ) — 0.18 A
Output Current (Sink, typ) — 0.26 A
Internal Oscillator Frequency — [DATA_NEEDED: oscillator frequency range]
Dead Time (typ) — 0.5 us
Half-Bridge Driver Propagation (typ) — 1.1 us
Bootstrap FET — Integrated
Supply Current (VCC, typ) — 0.5 mA
Shutdown Input — Yes (programmable)
Suhu Hubung Kerja — -40C to +125C
Level MSL — MSL2 / MSL3 (per Infineon datasheet family note)
Qualification Level — Industrial
Status RoHS — Compliant (Pb-free suffix)

Spek dan Sumber

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