IRS2153DSPBF vs IRS2153DPBF 比較

詳細並排比較 IRS2153DSPBF 由 Infineon 與 IRS2153DPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRS2153DSPBF IRS2153DPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 NRND
功能 Half-bridge gate driver with RC input oscillator —
Configuration High-side + low-side driver, half-bridge —
輸出數量 2 (HO, LO) 2 (High-Side, Low-Side)
Maximum Offset Voltage (Voffset) 600 V —
VCC Supply Voltage 10 V to 20 V [DATA_NEEDED: VCC range]
VBS High-side Supply Voltage VCC + 0.3 V (typical bootstrap) —
Gate Drive Source Current (IO+) 130 mA typical —
Gate Drive Sink Current (IO-) 270 mA typical —
Rise Time (tr) [DATA_NEEDED: tr] (typical ~100 ns) —
Fall Time (tf) [DATA_NEEDED: tf] (typical ~50 ns) —
Internal Deadtime ~1.2 us —
工作溫度 -40 C to +125 C —
封裝 8-SOIC (SOIC-8) 8-Pin PDIP (through-hole)
Input Type RC-input oscillator (no external PWM required) —
Logic Polarity Inverting / Non-inverting per channel —
Undervoltage Lockout Yes (VCC) —
Technology HVIC + latch-immune CMOS —
安裝類型 Surface Mount —
Product Type — Half-Bridge Gate Driver IC
Driver Configuration — Half-Bridge (High-Side + Low-Side)
拓撲 — Self-Oscillating (RC-timed)
Offset Voltage (High-Side) — 600 V (max)
Output Current (Source, typ) — 0.18 A
Output Current (Sink, typ) — 0.26 A
Internal Oscillator Frequency — [DATA_NEEDED: oscillator frequency range]
Dead Time (typ) — 0.5 us
Half-Bridge Driver Propagation (typ) — 1.1 us
Bootstrap FET — Integrated
Supply Current (VCC, typ) — 0.5 mA
Shutdown Input — Yes (programmable)
工作接面溫度 — -40C to +125C
MSL 等級 — MSL2 / MSL3 (per Infineon datasheet family note)
Qualification Level — Industrial
RoHS 狀態 — Compliant (Pb-free suffix)

資料表與資源

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